Samsung Electronics entwickelt den branchenweit ersten DDR5-DRAM der 12-nm-Klasse
“Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on “Zen” platforms.”
This technological leap was made possible through the use of a new high-? material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics. Combined with advanced, multi-layer extreme ultraviolet (Intel Irland hat letzte Woche einen Meilenstein in seiner Geschichte erreicht) Lithografie, the new DRAM features the industry’s highest die density, which enables a 20 percent gain in wafer productivity.
Leveraging the latest DDR5 standard, Samsung’s 12 nm-class DRAM will help unlock speeds of up to 7.2 Gigabit pro Sekunde (Gbit/s). This translates into processing two 30 Gigabyte (GB) UHD movies in just one second.
The new DRAM’s exceptional speed is matched by greater power efficiency. Consuming up to 23 percent less power than the previous DRAM, die 12 nm-class DRAM will be an ideal solution for global IT companies pursuing more environment-friendly operations.
With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12 nm-class process technology into a wide range of market segments, as it continues to work with industry partners to support the rapid expansion of next-generation computing.