Micron revela NAND Flash de 232 capas durante el Día del Inversor

During its investors day yesterday, Micron revealed its 232-layer NAND Flash, which for now is the most advanced of its kind. Micron is using what the company calls CMOS Under Array or CuA as the platform to build a pair of TLC stacks on top of, for a total of 232-layers. Each stacked NAND Flash chip is said to have a capacity of 1 Terabit, o 128 GB, so we’re not seeing any new capacity increases at this point, compared to the competition, but Micron is promising increased bandwidth node-over-node, so we might end up seeing better performance compared to its competitors. The new NAND Flash is supposed to be optimised for SSDs and other “managed” NAND, such as eMMC and UFS.

Micron also revealed an updated NAND Flash roadmap, with the company planning even more 200 plus layer products before moving to 300 and 400-layer stacks of NAND in the future. The 300-layer stacks are already under structural development, whereas the 400-layer products are still in the very early stages of research. The new 232-layer products are said to go into mass production towards the end of this year, so we shouldn’t expect to see products based on Micron’s 232-layer NAND until sometime in 2023.