Samsung annonce l'UFS 4.0 livrer jusqu'à 4,200 Mo/s de lecture, 2,800 Vitesses d'écriture en Mo/s pour les cartes mémoire

Samsung a annoncé la mise en œuvre de la dernière spécification standard JEDEC avec l'adoption de l'UFS (Stockage flash universel) la norme 4.0. The new standard offers a number of improvements over the previous UFS 3.1 specification related to either performance or power savings. The new standard increases speeds of up to 23.2 Gbps per lane, double that of the previous UFS 3.1 la norme. Additionally, UFS 4.0 unlocks sequential read speeds as high as 6.0 MB/s per mA – une 46% improvement over the previous spec, promising decreased battery drain even as workload time is reduced.

Samsung’s UFS 4.0 implementation will leverage the company’s 7th Gen V-NAND alongside a proprietary controller, which should ultimately enable speeds of up to 4,200 Mo / s. Sequential write speeds are nothing to scoff at either, promising up to 2,800 Mo / s. The improved performance doesn’t translate to increased package sizes, cependant, as UFS 4.0 will be distributed in compact packages with a maximum dimension of 11 mm x 13 mm x 1 mm for more effective space utilization and design convenience – with capacities reaching the 1 TB per package. Mass production is expected in 3Q2022. Samsung expects its new UFS 4.0-based products to deliver new experiences with increased data throughput of 5G smartphones, future automotive applications, and even AR and VR.