Samsung Electronics développe la première DRAM DDR5 de classe 12 nm du secteur
“Innovation often requires close collaboration with industry partners to push the bounds of technology,” dit Joe Macri, Senior VP, Corporate Fellow and Client, Compute and Graphics CTO at AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on “Zen” platforms.”
This technological leap was made possible through the use of a new high-? material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics. Combined with advanced, multi-layer extreme ultraviolet (VUE) lithography, the new DRAM features the industry’s highest die density, which enables a 20 percent gain in wafer productivity.
Leveraging the latest DDR5 standard, Samsung’s 12 nm-class DRAM will help unlock speeds of up to 7.2 gigabits par seconde (Gbit/s). This translates into processing two 30 gigabyte (GB) UHD movies in just one second.
The new DRAM’s exceptional speed is matched by greater power efficiency. Consuming up to 23 percent less power than the previous DRAM, le 12 nm-class DRAM will be an ideal solution for global IT companies pursuing more environment-friendly operations.
With mass production set to begin in 2023, Samsung plans to broaden its DRAM lineup built on this cutting-edge 12 nm-class process technology into a wide range of market segments, as it continues to work with industry partners to support the rapid expansion of next-generation computing.