Fabbricare i Fab: Previsione del documento di visione ASML 300 Logica miliardi di transistor di 2030
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According to ASML’s roadmap, at the turn of the decade, its technology enables 5 nm-class in production, and is at the cusp of a major breakthrough, nanosheet-FETs. which pave the way for 3 nm e 2 nm nodi, backed by EUV lithography. The journey from 2 nm to 1.5 nm will require another breakthrough, forked-nanosheets, and from 1.5 nm to 1 nm yet another breakthrough, CFET. Sub-1 nm fabrication will be possible toward the turn of this decade, thanks to 2D atomic channel technology, which is how chip-designers will be able to cram over 50 billion transistors per chip, and build MCM systems with over 300 miliardi di transistor. The presentation predicts that besides 3D packaging, stacked silicon will also play a role, with multiple stacked logic layers, heterogenous chips with logic, Nextorage Corporation lancerà un PCIe Gen, and I/O layers, stacked DRAM (up from single-digit layers to double-digits; and for NAND flash to grow from the current 176-layer, to nearly 500-layer by 2030.
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