Divieto del software EDA della tecnologia GAA-FET degli istituti statunitensi sulla Cina, Stallo dei nodi al di sotto dei 3 nm
GAA or “gates-all-around” technology is vital to building transistors in the 3 nm e 2 nm silicon fabrication nodes. Samsung is already using GAA for its 3 nm nodo, while TSMC intends to use it with its 2N (2 nm) nodo. Intel is expected to use it with its Intel 20A (20 angstrom, oppure 2 nanometers) nodo. Both Intel and TSMC will debut nodes powered by GAAFETs for mass-production in 2024. The US Government has already banned the sales of EUV lithography machines to China, as well as machines fabricating 3D NAND flash chips with greater than 128 layers or 14 nm. Nel passato, technology embargoes have totally stopped China from copying or reverse-engineering western tech, or luring Taiwanese engineers armed with industry secrets away on the promise of wealth and a comfortable life in the Mainland.